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Volumn 150, Issue 5, 2003, Pages

Electrical properties of Al2O3/ZrO2/Al2O3 gate stack in p-substrate metal oxide semiconductor devices

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CRYSTAL DEFECTS; ELECTRIC BREAKDOWN; ELECTRIC CHARGE; ELECTRIC CONDUCTIVITY; ELECTRON TUNNELING; GATES (TRANSISTOR); ION IMPLANTATION; LEAKAGE CURRENTS; MOS CAPACITORS; MOSFET DEVICES; ZIRCONIA;

EID: 0037502840     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1566022     Document Type: Article
Times cited : (1)

References (26)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.