Temperature effect on the reliability of ZrO2 gate dielectric deposited directly on silicon

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2000, Pages 72-76

  Qi, Wen Jie ^a   Nieh, Renee ^a   Onishi, Katsunori ^a   Lee, Byoung Hun ^a   Kang, Laegu ^a   Jeon, Yongjoo ^a   Gopalan, Sundar ^a   Lee, Jack C ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CHARGE; ELECTRIC POTENTIAL; EXTRAPOLATION; RELIABILITY; SEMICONDUCTOR DEVICE MODELS; SILICON WAFERS; THERMAL EFFECTS; ZIRCONIA;

ARRHENIUS PLOT;

GATES (TRANSISTOR);

EID: 0033743066     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (19)