Consistent model for short-channel nMOSFET post-hard-breakdown characteristics

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue TECHNOLOGY SYMP., 2001, Pages 121-122

  Kaczer, B ^a   Degraeve, R ^a   De Keersgieter, A ^a   Van de Mieroop, K ^a   Bearda, T ^a   Groeseneken, G ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; EQUIVALENT CIRCUITS; GATES (TRANSISTOR); RELIABILITY; SEMICONDUCTOR JUNCTIONS;

POST-HARD BREAKDOWN;

MOSFET DEVICES;

EID: 0034790454     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)