Physical mechanisms on the abnormal gate-leakage currents in pseudomorphic high electron mobility transistors

IEEE Transactions on Electron Devices

Volumn 50, Issue 4, 2003, Pages 1148-1152

  Cho, S D ^a,b   Kim, H T ^a   Kim, D M ^a  

^a Kookmin University   (South Korea)

^b Iljin Diamond   (South Korea)

Author keywords

Gate current; HEMT; Physical mechanism; Positive hump; Real space transfer; Resonant tunneling

Indexed keywords

ELECTRIC POTENTIAL; HIGH ELECTRON MOBILITY TRANSISTORS; RESONANT TUNNELING; SEMICONDUCTING GALLIUM ARSENIDE; THERMIONIC EMISSION;

REAL-SPACE-TRANSFER;

LEAKAGE CURRENTS;

EID: 0037480715     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.812493     Document Type: Article

References (16)

1. R. Menozzi, "Hot electron effects and degradation of GaAs and InP HEMT's for microwave and millimeter-wave applications," Semicond. Sci. Technol, vol. 13, pp. 1053-1063, Oct. 1998.
2. S. Takamiya, M. Harayama, T. Sugimura, T. Tsuzuku, T. Taya, K. Iiyama, and S. Hashimoto, "Reverse currents of Schottky gates of III-V MESFET/HEMTS: Field emission and tunnel currents," Solid State Electron., vol. 42, pp. 447-451, Mar. 1998.
3. G. Meneghesso, A. Neviani, R. Oesterholt, M. Matloubian, T. Liu, J. J. Brown, C. Canali, and E. Zanoni, "On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness," IEEE Trans. Electron Devices, vol. 46, pp. 2-9, Jan. 1999.
4. G. Meneghesso, G. Massari, D. Buttari, A. Bortoletto, M. Maretto, and E. Zanoni, "DC and pulsed measurements of on-state breakdown voltage in GaAs MESFET's and InP-based HEMTs," Microelectron. Reliab., vol. 39, pp. 1759-1763, Dec. 1999.
5. G. Meneghesso, A. Mion, Y. Haddab, M. Pavesi, M. Manfredi, C. Canali, and E. Zononi, "Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: Failure mechanisms induced by hot carrier testing," J. Appl. Phys., vol. 82, pp. 5547-5554, Dec. 1997.
6. R. T. Webster, S. Wu, and A. F. M. Anwar, "Impact ionization in InAlAs/InGaAs/InAlAs HEMT's," IEEE Electron Device Lett., vol. 21, pp. 193-195, May 2000.
7. S. Takatani, H. Matsumoto, J. Shigeta, K. Ohshika, T. Yamashita, and M. Fukui, "Generation mechanism of gate-leakage current due to reverse-voltage stress i-AlGaAs/n-GaAs HIGFET's," IEEE Trans. Electron Devices, vol. 45, pp. 14-20, Jan. 1998.
8. B. Georgescu, M. A. Py, A. Souifi, and G. Guilot, "New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFET's," IEEE Electron Device Lett., vol. 19, pp. 154-156, May 1998.
9. N. Labat, N. Saysset, A. Touboul, Y. Danto, P. Cova, and F. Fantini, "Analysis of hot electron degradations in pseudomorphic HEMT's by DCTS and LF noise characterization," Microelectron. Reliab., vol. 37, pp. 1675-1678, Oct. 1997.
10. Y. C. Chou, G. P. Li, Y. C. Chen, C. S. Wu, K. K. Yu, and T. A. Midford, "Off-state breakdown effects on gate-leakage current in power pseudomorphic AlGaAs/InGaAs HEMTs," IEEE Electron Device Lett., vol. 18, pp. 479-481, Oct. 1996.
11. M. H. Somerville, J. A. del Alamo, and P. Saunier, "Off-state breakdown in power pHEMTs: The impact of the source," IEEE Trans. Electron Devices, vol. 45, pp. 1883-1889, Sept. 1998.
12. Y.-W. Chen, W.-C. Shu, H.-M. Shieh, Y.-J. Chen, Y.-S. Lin, Y.-J. Li, and T.-B. Wang, "High breakdown characteristic d-doped InGaP/In-GaAs/AlGaAs tunneling real-space-transfer HEMT," IEEE Trans. Electron Devices, vol. 49, pp. 221-225, Feb. 2002.
13. C.-L. Wu and W.-C. Hsu, "Enhanced resonant tunneling real-space transfer in δ-doped GaAs/InGaAs gated dual-channel transistors grown by MOCVD," IEEE Trans. Electron Devices, vol. 43, pp. 207-212, Feb. 1996.
14. J. P. Sun, G. I. Haddad, P. Mazumder, and J. N. Schulman, "Resonant tunneling diodes: Models and properties," Proc. IEEE, vol. 86, pp. 641-660, Apr. 1998.
15. J.-P. Leburton and J. Kolodzey, "Tunneling injection into modulation doping structures: A mechanism for negative differential resistance three-terminal high-speed devices," IEEE Trans. Electron Devices, vol. 35, pp. 1530-1532, Sept. 1988.
16. J. Laskar, J. M. Bigelow, J.-P. Leburton, and J. Kolodzey, "Experimental and theoretical investigation of the DC and high-frequency characteristics of the negative differential resistance in pseudomorphic AlGaAs/InGaAs/GaAs MODFET's," IEEE Trans. Electron Devices, vol. 39, pp. 257-263, Feb. 1992.