Analysis of hot electron degradations in pseudomorphic hemts by DCTS and LF noise characterization

Microelectronics Reliability

Volumn 37, Issue 10-11, 1997, Pages 1675-1678

  Labat, N ^a   Saysset, N ^a   Touboul, A ^a   Danto, Y ^a   Cova, P ^b   Fantini, F ^b  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b UNIVERSITY OF PARMA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRONS; HOT CARRIERS; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPY; SPURIOUS SIGNAL NOISE;

DRAIN CURRENT TRANSIENT SPECTROSCOPY; HOT ELECTRON STRESS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031251560     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00137-6     Document Type: Article

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