Intrinsic point defects in oxidized 3C epitaxial layers on Si substrates

Journal of Applied Physics

Volumn 89, Issue 2, 2001, Pages 955-959

  Macfarlane, Patricia J ^a   Zvanut, M E ^a   Janowski, Gregg M ^b  

^a UNIVERSITY OF ALABAMA AT BIRMINGHAM   (United States)

^b University of Alabama at Birmingham   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345501347     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1333741     Document Type: Article

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