Transport of positrons in the electrically biased metal-oxide-silicon system

Journal of Applied Physics

Volumn 81, Issue 4, 1997, Pages 1943-1955

  Clement, M ^a,b   De Nijs, J M M ^b   Balk, P ^b   Schut, H ^a   Van Veen, A ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345866985     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364050     Document Type: Article

References (23)

1. P. J. Schultz and K. G. Lynn, Rev. Mod. Phys. 60, 701 (1988).
2. M. J. Puska and R. M. Nieminen, Rev. Mod. Phys. 66, 814 (1994).
3. A. Uedono, s. Tanigawa, and Y. Ohji, Phys. Lett. A 133, 82 (1988).
4. T. C. Leung, P. Asoka-Kumar, B. Nielsen, and K. G. Lynn, J. Appl. Phys. 73, 168 (1993).
5. P. Asoka-Kumar, K. G. Lynn, and D. O. Welch, J. Appl. Phys. 76, 4935 (1995).
6. M. Clement, J. M. M. de Nijs, P. Balk, H. Schut, and A. van Veen, J. Appl. Phys. 79, 9029 (1996).
7. A. van Veen, J. Trace Microprobe Technol. 8, 1 (1990).
8. L. Liszkay, C. Corbel, L. Baroux, P. Hautojärvi, M. Bayhan, A. W. Brinkman, and S. Tararenko, Appl. Phys. Lett. 64, 1380 (1994).
9. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982).
10. B. Nielsen, K. G. Lynn, Y. C. Chen, and D. O. Welch, Appl. Phys. Lett. 51, 1022 (1987).
11. When decreasing implantation energy below 0.5 keV, the trapping of positrons in the thin Al gate becomes overruled by trapping at the surface which acts as a efficient sink for positrons (see Ref. 1).
12. M. Clement, J. M. M. de Nijs, A. van Veen, H. Schut, and P. Balk, IEEE Trans. Nucl. Sci. NS-42, 1717 (1995).
13. A. van Veen, H. Schut, J. de Vries, R. A. Hakvoort, and M. R. IJpma, in Positron Beams for Solids and Surfaces, AIP Conference Proceedings 218, edited by P. J. Schultz, G. R. Massoumi, and P. J. Simpson (AIP, New York, 1990), p. 171.
14. A. van Veen, H. Schut, M. Clement, J. M. M. de Nijs, A. Kruseman, and M. R. IJpma, Appl. Surf. Sci. 85, 216 (1995).
15. S. Mäkinen, H. Rajainmäki, and S. Linderoth, Phys. Rev. B 42, 11166 (1990).
16. J. Mäkinen, C. Corbel, P. Hautojärvi, A. Vehanen, and D. Mathiot, Phys. Rev. B 42, 1750 (1990).
17. P. J. Schult, E. Tandberg, K. G. Lynn, B. Nielsen, T. E. Jackman, M. W. Denhoff, and G. C. Aers, Phys. Rev. Lett. 61, 187 (1988).
18. Ken-ichi Okamoto, Kazuhiro Tanaka, Miko Katsube, Osamu Sueoka, and Yasuo Ito, Radiat. Phys. Chem. 41, 497 (1993).
19. M. V. Fischetti, D. J. DiMaria, S. D. Brorson, T. N. Theis, and J. R. Kirtley, Phys. Rev. B 31, 8124 (1985).
20. T. H. Ning, J. Appl. Phys. 47, 3203 (1976).
21. E. H. Pointdexter, P. J. Caplan, B. E. Deal, and R. R. Razouk, J. Appl. Phys. 52, 879 (1981).
22. P. Balk, Extended Abstract of Papers, presented at the Electrochemical Society Meeting, Buffalo, NY, 10-14 October, 1965 (The Electrochemical Society, New York, 1965), paper 111.
23. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).