Comment on "reduction of interface-state density in 4H-SiC n-type metal-oxide-semiconductor structures using high-temperature hydrogen annealing" [Appl. Phys. Lett. 76 1585 (2001)]

Applied Physics Letters

Volumn 78, Issue 25, 2001, Pages 4043-

  Afanas'ev, V V ^a   Stesmans, A ^a   Bassler, M ^b   Pensl, G ^b   Schulz, M J ^b  

^a KU LEUVEN   (Belgium)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 17844370787     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1379978     Document Type: Article

References (0)