SiGe CMOS fabrication using SiGe MBE and anodic/LTO gate oxide

Semiconductor Science and Technology

Volumn 15, Issue 2, 2000, Pages 135-138

  Sidek, R M ^a   Straube, U N ^a   Waite, A M ^a   Evans, A G R ^a   Parry, C ^b   Phillips, P ^b   Whall, T E ^b   Parker, E H C ^b  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; MOSFET DEVICES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

GATE OXIDES;

CMOS INTEGRATED CIRCUITS;

EID: 0033874595     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/2/310     Document Type: Article

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