Oxide thickness- and bias-dependence of postmetallization annealing of interface states in metal-oxide-silicon diodes

Journal of the Electrochemical Society

Volumn 144, Issue 5, 1997, Pages 1866-1869

  Ragnarsson, Lars Åke ^a   Lundgren, Per ^a   Ovuka, Zoran ^a,b   Andersson, Mats O ^a,c  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b ACREO AB   (Sweden)

^c VOLVO CAR CORPORATION   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; INTERFACES (MATERIALS);

CAPACITANCE-VOLTAGE; POSTMETALLIZATION ANNEALING;

MOS DEVICES;

EID: 0031143298     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837692     Document Type: Article

References (20)

1. M. O. Andersson, P. Lundgren, O. Engström, and K. R. Farmer, Microelectron. Eng., 22, 235 (1993).
2. M. O. Andersson, A. Lundgren, and P. Lundgren, Phys. Rev. B, 50, 11666 (1994).
3. E. Cartier and J. H. Stathis, Appl. Phys. Lett., 69 103 (1996).
4. P. Lundgren, M. O. Andersson, and K. R. Farmer, J. Appl. Phys., 74, 4780 (1993).
5. M. L. Reed and J. D. Plummer, ibid., 63, 5776 (1988).
6. E. P. Burte, ibid., 64, 5013 (1988).
7. 2 Interface, C. R. Helms and B. E. Deal, Editors, Plenum Press, New York (1988).
8. See for instance E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, Wiley, New York (1982).
9. L. DoThanh and P. Balk, This Journal, 135, 1797 (1988).
10. A. H. Edwards, Phys. Rev. B, 44, 1832 (1991).
11. E. H. Poindexter, P. J. Caplan, B. E. Deal, and R. R. Razouk, J. Appl. Phys., 52, 879 (1981).
12. E. Cartier, J. H. Stathis, and D. A. Buchanan, Appl. Phys. Lett., 63, 1510 (1993).
13. J. H. Stathis and E. Cartier, Phys. Rev. Lett., 72, 2745 (1994).
14. G. Gerardi, E. Poindexter, and P. J. Caplan, Appl. Phys. Lett., 49, 348 (1986).
15. J. H. Stathis and L. Dori, ibid., 58, 1641 (1991).
16. 2 Interface, C. R. Helms and B. E. Deal, Editors, Plenum Press, New York (1988).
17. A. Stesmans, Solid State Commun., 97, 255 (1995).
18. E. Poindexter, Semicond. Sci. Technol., 4, 961 (1989).
19. E. H. Poindexter, G. J. Gerardi, M.-E. Rueckel, P. J. Caplan, N. M. Johnson, and D. K. Biegelsen, J. Appl. Phys., 56, 2844 (1984).
20. M. Depas, Ph.D. Thesis, Universiteit Gent, Ghent, Belgium (1995).