High-quality thermal oxide grown on high-temperature-formed SiGe

Journal of the Electrochemical Society

Volumn 147, Issue 5, 2000, Pages 1962-1964

  Wu, Y H ^a   Chen, S B ^a   Chin, A ^a   Chen, W J ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOSFET DEVICES; OXIDES; SILICON WAFERS; SURFACE ROUGHNESS; THERMOOXIDATION; X RAY DIFFRACTION ANALYSIS;

CAPACITANCE VOLTAGE MEASUREMENT; GATE OXIDE INTEGRITY; SOLID PHASE EPITAXY; STRESS INDUCED LEAKAGE CURRENT; TIME DEPENDENT DIELECTRIC BREAKDOWN;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033729073     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393466     Document Type: Article

References (20)

1. W. Ting, G. Q. Lo, J. Ahn T. Y. Chu, and D. L. Kwong, IEEE Electron Device Lett., 12, 416, (1991).
2. C. T. Liu, Y. Ma, J. Becerro, S. Nakahara, D J. Eaglesham, and S. J. Hillenius, IEEE Electron Device Lett., 18, 105, (1997).
3. M.-Y. Hao, Kafai Lai, W.-M. Chen, and J. C. Lee, Tech. Dig. Int. Electron Devices Meet., 601 (1994).
4. A. Chin, C. C. Liao, C. H. Lu, W. J. Chen, and C. Tsai, Symposium on VLSI Technology, p. 135, Kyoto, Japan (1999).
5. F. K. LeGoues, R. Rosenberg, T. Nguyen, F. Himpsel, and B. S. Meyerson, J. Appl. Phys., 65, 1724, (1989).
6. H. K. Kiou, P. Mei, U. Gennser, and E. S. Yang, Appl. Phys. Lett., 59, 1200, (1991).
7. D. K. Nayak, K. Kamjoo, J. S. Park, J. C. S. Woo, and K. L. Wang, Appl. Phys. Lett., 57, 369, (1990).
8. I. S. Goh, S. Hall, W. Eccleston, J. F. Zhang, and K. Werner, Electron Lett., 30, 1988, (1994).
9. P. W. Li, E. S. Yang, Y. F. Yang, J. O. Chu, and B. S. Meyerson, IEEE Electron Device Lett., 15, 402 (1994).
10. D. Tehikatilov, Y. F. Yang, and E. S. Yang, Appl. Phys. Lett., 69, 2578 (1996).
11. S. S. Iyer, Paul M. Solomon, V. P. Kesan, A. A. Bright, John L. Freeouf, Thao N. Nguyen, and Alan C. Warren, IEEE Electron Device Lett., 12, 246 (1991).
12. V. P. Kesan, S. Subhanna, P. J. Restle, M. J. Tejwani, J. M. Altken, S. S. Iyer, and J. A. Ott, Tech. Dig. Int. Electron Devices Meet., 25 (1991).
13. J. Welser, J. L. Hoyt, and J. F. Gibbons, IEEE Electron Device Lett., 15, 100 (1994).
14. S. Verdonckt-Vandebrock, E. F. Crabbe, B. S. Meyerson, D. L. Harame, P. J. Resile, J. M. C. Stork, and J. B. Johnson, IEEE Trans. Electron Devices, 41, 97 (1996).
15. Y. Taur and T. K. Ning, Fundamentals of Modern VLSI Devices, p. 286, Cambridge University Press, Cambridge (1998).
16. Y. H. Wu, W. J. Chen, S. L. Chang, A. Chin, S. Gwo, and C. Tsai, IEEE Electron Device Lett., 20, 200 (1999).
17. Y. H. Wu, W. J. Chen, A. Chin, and C. Tsai, Appl. Phys. Lett., 74, 528 (1999).
18. Y. H. Wu, W. J. Chen, A. Chin, and C. Tsai, 41st Electronic Materials Conf., 1999, Santa Barbara, CA.
19. Y. Taur and T. K. Ning, Fundamentals of Modern VLSI Devices, p. 196, Cambridge University Press, Cambridge (1998).
20. J. M. Lai, W. H. Chieng, B. C. Lin, Albert Chin, and C. Tsai, J. Electrochem. Soc., 146, 2216 (1999).