Thinning of Si in SOI wafers by the SC1 standard clean

1999 IEEE International SOI Conference, SOI 1999 - Proceedings

Volumn , Issue , 1999, Pages 114-115

  Celler, G K ^a   Barr, D L ^a   Rosamilia, J M ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 25544431695     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.1999.819879     Document Type: Conference Paper

References (3)

1. M. Bmel, Electronics Lett. 31, 1201 (1995).
2. W. Kem, J. Electrochem. Soc. 137, 1887 (1990).
3. J.M. Rosamilia, T. Boone, J. Sapjeta, L. Psota-Kelty, K. Hanson, and G. Higashi, Proceedings ofthe Thud International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS'96, (Acco, Leuven, Belgium, 1996).