Electrical characterization of low thermal budget gate oxides on Si/Si0.8Ge0.2/Si substrates

Solid-State Electronics

Volumn 46, Issue 7, 2002, Pages 991-995

  Sareen, Alok ^a   Lindgren, Ann Chatrin ^b   Lundgren, Per ^a   Bengtsson, Stefan ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; ELECTRIC PROPERTIES; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

ELECTRICAL CHARACTERIZATION; LOW THERMAL BUDGET GATE OXIDES;

GATES (TRANSISTOR);

EID: 0036642868     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00032-1     Document Type: Conference Paper

References (10)

1. SiGe CMOS fabrication using SiGe MBE and anodic/LTO gate oxides
2. Impact of the gate material on the interface state density of metal-oxide-silicon devices with an ultrathin oxide layer
3. A gate-quality dielectric system for SiGe metal-oxide-semiconductor devices
4. Oxide thickness- and bias-dependence of postmetallization annealing of interface states in metal-oxide-silicon diodes
5. High quality thermal oxide grown on high-temperature-formed SiGe
6. Observation of zero temperature coefficient of capacitance in the MOS capacitor
7. Temperature dependence confirmation of tunneling through 2-6 nm silicon dioxide