Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal-oxide-semiconductor field effect transistor channels

Applied Physics Letters

Volumn 74, Issue 13, 1999, Pages 1848-1850

  Grasby, T J ^a   Parry, C P ^a   Phillips, P J ^a   McGregor, B M ^a   Morris, R J H ^a   Braithwaite, G ^a   Whall, T E ^a   Parker, E H C ^a   Hammond, R ^b   Knights, A P ^c   Coleman, P G ^d  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c UNIVERSITY OF SURREY   (United Kingdom)

^d UNIVERSITY OF EAST ANGLIA   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HALL EFFECT; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MOS DEVICES; POINT DEFECTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; THERMOOXIDATION;

SILICON GERMANIDE;

FIELD EFFECT TRANSISTORS;

EID: 0032621873     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123689     Document Type: Article

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