Impact of the gate material on the interface state density of metal-oxide-silicon devices with an ultrathin oxide layer

Journal of Applied Physics

Volumn 85, Issue 4, 1999, Pages 2229-2232

  Lundgren, Per ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001451398     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369531     Document Type: Article

References (11)

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