Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors

Solid-State Electronics

Volumn 47, Issue 6, 2003, Pages 1099-1104

  Pala, N ^a,b   Rumyantsev, S ^a,d   Shur, M ^a   Gaska, R ^b   Hu, X ^b   Yang, J ^c   Simin, G ^c   Khan, M A ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^c UNIVERSITY OF SOUTH CAROLINA   (United States)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

1 f noise; Activation energy; Generation recombination noise; Low frequency noise

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SPURIOUS SIGNAL NOISE;

LOW FREQUENCY NOISE;

HETEROJUNCTIONS;

EID: 0037409018     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00475-6     Document Type: Article

References (26)

1. Simin G., Hu X., Tarakji A., Zhang J., Koudymov A., Saygi S.et al. AlGaN/InGaN/GaN double heterostructure field-effect-transistors. Jpn. J. Appl. Phys. 40:2001;L1142-L1144.
2. 0.6N thin films. Fluctuation Noise Lett, in press.
3. Balandin A. Gate voltage dependence of low frequency noise in GaN/AlGaN heterostructure field effect transistors. Electron. Lett. 36(10):2000;912-913.
4. Rumyantsev S.L., Pala N., Shur M.S., Gaska R., Levinshtein M.E., Asif Khan M.et al. Thin n-GaN films with low level of the. 1/f noise Electron. Lett. 37(11):2001;720.
5. Pala N., Gaska R., Rumyantsev S., Shur M.S., Asif Khan M., Hu X.et al. Low-frequency noise in AlGaN/GaN MOS-HFETs. Electron. Lett. 36(3):2000;268.
6. Rumyantsev S.L., Pala N., Shur M.S., Borovitskaya E., Dmitriev A.P., Levinshtein M.E.et al. Generation-recombination noise in GaN/GaAlN heterostructure field effect transistors. IEEE Trans. Electron Dev. 48(3):2001;530.
7. Gaska R., Yang J.W., Osinsky A., Chen Q., Asif Khan M., Orlov A.O.et al. Electron transport in AlGaN-GaN heterostructures grown on 6H-SiC substrates. Appl. Phys. Lett. 72(6):1998;707-709.
8. Rumyantsev S.L., Pala N., Shur M.S., Gaska R., Levinshtein M.E., Ivanov P.A.et al. Concentration dependence of the. 1/f noise in AlGaN/GaN heterostructure field effect transistors Semicond. Sci. Technol. 17:2002;476-479.
9. Ivanov P.A., Levinshtein M.E., Simin G., Hu X., Yang J., Asif Khan M.et al. Drift mobility of electrons in AlGaN/GaN MOSHFET. Electron. Lett. 37(24):2001;1479-1481.
10. Weimann N.G., Eastman L.F., Doppalapudi D., Ng H.M., Maustakus T.D. Scattering of electrons at threading dislocations in GaN. J. Appl. Phys. 83(7):1998;3656-3659.
11. Ando T., Fowler A.B., Stern F. Electronic properties of two-dimensional systems. Rev. Modern Phys. 54(2):1982.
12. Gaska R., Shur M.S., Bykhovski A.D., Orlov A.O., Snider G.L. Electron mobility in modulation doped AlGaN-GaN heterostructures. Appl. Phys. Lett. 74(2):1999;287-289.
13. Dang X.Z., Asbeck P.M., Yu E.T., Sullivan G.J., Chen M.Y., McDermott B.T.et al. Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor. Appl. Phys. Lett. 74(25):1999;3890-3892.
14. Knap W, Borovitskaya E, Shur MS, Gaska R, Karczewski, G, Brandt B, et al. High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN, SiC, and sapphire substrates. In: Wetzel G, Shur MS, Mishra UK, Gil B, Kishino K, editors. Materials Research Society Symposium Proceedings, Vol. 639, G7.3. 2001.
15. Hooge F.N., Kleinpenning T.G.M., Vandamme L.K.J. Experimental studies on. 1/f noise Rep. Progr. Phys. 44(5):1981;479-532.
16. Rumyantsev S.L., Pala N., Shur M.S., Gaska R., Levinshtein M.E., Asif Khan M.et al. Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors. J. Appl. Phys. 90(1):2001;310-314.
17. Rumyantsev S.L., Pala N., Shur M.S., Levinshtein M.E., Ivanov P.A., Asif Khan M.et al. Low-frequency noise in AlGaN/GaN heterostructure field effect transistors and metal oxide semiconductor heterostructure field effect transistors. Fluctuation Noise Lett. 1(4):2001;L221-L226.
18. McWhorter A.L. 1/f Noise and germanium surface properties Kingston R.H. Semiconductor surface physics. 1957;207-228 University of Pennsylvania Press, Philadelphia PA.
19. Vandamme L.K.J., Li X., Rigaud D. 1/f noise inMOS devices mobility or number fluctuations IEEE Trans. Electron Dev. 41(11):1994;1936-1945.
20. Dyakonova N.V., Levinshtein M.E., Contreras S., Knap W., Beaumont B., Gibart P. Low-frequency noise in n-GaN. Semiconductors. 32:1998;257.
21. Levinshtein M.E., Rumyantsev S.L., Look D.C., Molnar R.J., Asif Khan M., Simin G.et al. Low-frequency noise in n-GaN with high electron mobility. J. Appl. Phys. 86:1999;5075.
22. Sodini D., Touboul A., Lecoy G., Savelli M. Generation-recombination noise in the channel of GaAs Schottky-gate field-effect transistors. Electron. Lett. 12:1976;42-43.
23. Scholz F.J., Hwang J.M., Schroeder D.K. Low frequency noise and DLTS as semiconductor device characterization tools. Solid State Electron. 31(2):1988;205-217.
24. Levinshtein M.E., Rumyantsev S.L. Noise spectroscopy of local levels in semiconductors. Semicond. Sci. Technol. 9(6):1994;1183-1189.
25. 1-x N alloys ( 0.36
26. Wu J., Walukiewicz W., Yu K.M., Ager J.W. III, Haller E.E., Lu Hai, et al. Unusual properties of the fundamental band gap of InN. Appl. Phys. Lett. 80(21):2002;3967-3969.