High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN, SiC, and sapphire substrates

Materials Research Society Symposium - Proceedings

Volumn 639, Issue , 2001, Pages

  Knap, W ^a   Borovitskaya, E ^a   Shur, M S ^a   Gaska, R ^a   Karczewski, G ^a   Brandt, B ^a   Maude, D ^a   Frayssinet, E ^a   Lorenzini, P ^a   Grandjean, N ^a   Massies, J ^a   Yang, J W ^a   Hu, X ^a   Simin, G ^a   Khan, M Asif ^a   Skierbiszewski, C ^a   Prystawko, P ^a   Grzegory, I ^a   Porowski, S ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; ELECTRON ENERGY LEVELS; ELECTRON GAS; ENERGY GAP; GALLIUM NITRIDE; HALL EFFECT; HIGH ELECTRON MOBILITY TRANSISTORS; MAGNETIC FIELD EFFECTS; MAGNETIC VARIABLES MEASUREMENT; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES;

CYCLOTRON RESONANCE MEASUREMENT; HALL MEASUREMENT; LANDAU LEVELS; MAGNETOTRANSPORT MEASUREMENT; QUANTUM HALL EFFECT; SPIN SPLITTING;

HETEROJUNCTIONS;

EID: 17144456352     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)