Structural and optical properties of MBE grown GaNAs/GaAs quantum well structures

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 496-500

  Noda, T ^a   Koshiba, S ^b   Nagamune, Y ^c   Sakaki, H ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b KAGAWA UNIVERSITY   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

COMPOSITION EFFECTS; ELECTRON MOBILITY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA SOURCES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; X RAY DIFFRACTION ANALYSIS;

WATER-COOLED NITROGEN PLASMA CELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035398983     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00755-2     Document Type: Conference Paper

References (8)