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Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 8, 2001, Pages 853201-853204

Effect of band anticrossing on the optical transitions in GaAS1-xNx/GaAS multiple quantum wells

(8) Wu, J a,b Shan, W b Walukiewicz, W b Yu, K M b Ager, J W b Haller, E E a,b Xin, H P c Tu, C W c

a UNIVERSITY OF CALIFORNIA (United States)

b LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

c UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM; NITROGEN;

ARTICLE; CALCULATION; CONCENTRATION (PARAMETERS); DISPERSION; ELECTRON TRANSPORT; OPTICS; PHASE TRANSITION; QUANTUM MECHANICS; REFLECTOMETRY;

EID: 0035880833 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.64.085320 Document Type: Article

Times cited : (95)

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