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Physica Status Solidi (B) Basic Research

Volumn 216, Issue 1, 1999, Pages 135-139

Effect of nitrogen-induced modification of the conduction band structure on electron transport in GaAsN alloys

(12) Skierbiszewski, C a Perlin, P a Wisniewski, P a Suski, T a Walukiewicz, W b Shan, W b Ager, J W b Haller, E E b Geisz, J F c Friedman, D J c Olson, J M c Kurtz, S R c

a INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

b LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

c NATIONAL RENEWABLE ENERGY LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; NITROGEN; SEMICONDUCTOR ALLOYS;

ANTICROSSINGS; CONDUCTION-BAND STATE; EFFECTIVE MASS; ELECTRON TRANSPORT; PHENOMENOLOGICAL MODELING; PRESSURE COEFFICIENTS; PRESSURE RANGES; PRESSURE STUDIES;

GALLIUM ALLOYS;

EID: 0033229416 PISSN: 03701972 EISSN: None Source Type: Journal
DOI: 10.1002/(sici)1521-3951(199911)216:1<135::aid-pssb135>3.0.co;2-%23 Document Type: Article

Times cited : (71)

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