Photoluminescence characteristics of nitrogen atomic-layer-doped GaAs grown by MOVPE

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 372-376

  Saito, Hisao ^a   Makimoto, Toshiki ^a   Kobayashi, Naoki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; EXCITONS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030678205     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00523-4     Document Type: Article

References (4)

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3. M.S. Skolnick, D.P. Halliday and C.W. Tu, Phys. Rev. B38 (1988) 4165.
4. R, Schwabe, W. Seifert, F. Bugge, R. Bindemann, V.F. Agekyan and S.V. Pogarev, Solid State Commun. 55 (1985) 167.