Discrete and continuous spectrum of nitrogen-induced bound states in heavily doped GaAs1 − xNx

Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 8, 2001, Pages

  Zhang, Yong ^a   Mascarenhas, A ^a   Geisz, J F ^a   Xin, H P ^b   Tu, C W ^b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY; GALLIUM ARSENIDE; NITROGEN;

ARTICLE; CHEMICAL STRUCTURE; CONCENTRATION (PARAMETERS); ELECTROCHEMISTRY; MEASUREMENT; METAL BINDING; RAMAN SPECTROMETRY; SEMICONDUCTOR; SPECTROSCOPY;

EID: 84858799538     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.085205     Document Type: Article

References (48)

1. M. Weyers, M. Sato, and H. Ando: Jpn. J. Appl. Phys., Part 1: 31, L853 (1992).
2. J. D. Perkins, A. Mascarenhas, Y. Zhang, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz: Phys. Rev. Lett.: 82, 3312 (1999).
3. P. J. Dean: J. Lumin.: 1-2, 398 (1970).
4. W. Czaja: Festkoerperprobleme: 11, 65 (1971).
5. M. G. Craford and N. Holonyak, Jr., in Optical Properties of Solids: New Developments, edited by B. O. Seraphin (North-Holland, Amsterdam, 1976), pp. 187.
6. R. J. Nelson, in Excitons, edited by E. I. Rashba and M. D. Sturge (North-Holland, Amsterdam, 1982), pp. 319.
7. V. K. Bazhenov and V. I. Fistul’, Fiz. Tekh. Poluprocodn. 18, 1345 (1984)
8. V. K. Bazhenov and V. I. Fistul’, Sov. Phys. Semicond.: 18, 843 (1984).
9. Yong Zhang and W.-K. Ge: J. Lumin.: 85, 247 (2000).
10. Y. Zhang, B. Fluegel, A. Mascarenhas, H. P. Xin, and C. W. Tu: Phys. Rev. B: 62, 4493 (2000).
11. D. J. Wolford, J. A. Bradley, K. Fry, J. Thompson, and H. E. King, in Gallium Arsendide and Related Compounts, edited by G. E. Stillman, Inst. Phys. Conf. Ser. No. 65 (The Institute of Physics, Bristol, 1983), p. 477;
12. D. J. Wolford, J. A. Bradley, K. Fry, J. Thompson, and H. E. King, in Proceedings of the 17th International Conference on the Physics of Semiconductors, edited by J. D. Chadi and W. A. Harrison (Springer, New York, 1984), p. 627.
13. M. Leroux, G. Neu, and C. Vèrié: Solid State Commun.: 58, 289 (1986).
14. X. Liu, M.-E. Pistol, L. Samuelson, S. Schwetlick, and W. Seifert: Appl. Phys. Lett.: 56, 1451 (1990);
15. X. Liu, M.-E. Pistol, and L. Samuelson: Phys. Rev. B: 42, 7504 (1990).
16. G. G. Kleiman: Phys. Rev. B: 6, 3198 (1979).
17. H. P. Hjalmarson, P. Vogl, D. J. Wolford, and J. D. Dow: Phys. Rev. Lett.: 44, 810 (1980).
18. R. Scheabe, W. Seifert, F. Bugge, R. Bindemann, V. F. Agekyan, and S. V. Pogarev: Solid State Commun.: 55, 167 (1985).
19. T. Makimoto and N. Kobayashi: Appl. Phys. Lett.: 67, 688 (1995).
20. T. Shima, Y. Makita, S. Kimura, H. Sanpei, Y. Fukuzawa, A. Sandhu, and Y. Nakamura: Appl. Phys. Lett.: 74, 2675 (1999).
21. T. Shima, Y. Makita, S. Kimura, T. Iida, H. Sanpei, M. Yamaguchi, K. Kudo, K. Tanaka, N. Kobayashi, A. Sandhu, and Y. Hoshino: Nucl. Instrum. Methods Phys. Res. B: 127/128, 437 (1997).
22. Y. Zhang and A. Mascarenhas: Phys. Rev. B: 61, 15 562 (2000).
23. T. Makimoto, H. Saito, and N. Kobayashi: Jpn. J. Appl. Phys., Part 1: 36, 1694 (1997).
24. T. Makimoto, H. Saito, T. Nishida, and N. Kobayashi: Appl. Phys. Lett.: 70, 2984 (1997).
25. S. Francoeur, G. Sivaraman, Y. Qin, S. Nikishin, and H. Temkin: Appl. Phys. Lett.: 72, 1857 (1998).
26. H. Güning, L. Chen, Th. Hartmann, P. J. Klar, W. Heimbrodt, F. Höhnsdorf, J. Koch, and W. Stolz: Phys. Status Solidi B: 215, 39 (1999).
27. S. Francoeur, S. A. Nikishin, C. Jin, Y. Qin, and H. Temkin: Appl. Phys. Lett.: 75, 1538 (1999).
28. H. Yaguchi, S. Miyoshi, G. Biwa, M. Kibune, K. Onabe, Y. Shiraki, and R. Ito: J. Cryst. Growth: 170, 353 (1997).
29. Y. Zhang, A. Mascarenhas, H. P. Xin, and C. W. Tu: Phys. Rev. B: 61, 7479 (2000).
30. W. Shan, W. Walukiewicz, J. W. Ager III, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz: Phys. Rev. Lett.: 82, 1221 (1999).
31. W. Shan, W. Walukiewicz, J. W. Ager III, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz: J. Appl. Phys.: 86, 2349 (1999).
32. A. Rubio and M. L. Cohen: Phys. Rev. B: 51, 4343 (1995).
33. J. Neugebauer and C. G. Van de Walle: Phys. Rev. B: 51, 10 568 (1995).
34. S.-H. Wei and A. Zunger: Phys. Rev. Lett.: 76, 664 (1996).
35. L. Bellaiche, S.-H. Wei, and A. Zunger: Phys. Rev. B: 54, 17 568 (1996).
36. H. Aourag, B. Bouhafs, and M. Certier: Phys. Status Solidi B: 201, 117 (1997).
37. B. K. Agrawal, P. S. Yadav, R. Srivastava, and S. Agrawal: J. Phys.: Condens. Matter: 10, 4597 (1998).
38. E. D. Jones, N. A. Modline, A. A. Allerman, S. R. Kurtz, A. F. Wright, S. T. Tozer, and X. Wei: Phys. Rev. B: 60, 4430 (1999).
39. T. Mattila, S.-H. Wei, and A. Zunger: Phys. Rev. B: 60, R11 245 (1999).
40. D. J. Wolford, B. G. Streetman, S. Lai, and M. V. Klein: Solid State Commun.: 32, 51 (1979).
41. Y. Zhang, Q. Yu, J. S. Zheng, B. Z. Yan, B. X. Wu, W. K. Ge, Z. Y. Xu, and J. Z. Xu: Solid State Commun.: 68, 707 (1988).
42. J. H. Collet, J. A. Kash, D. J. Wolford, and J. Thompson: J. Phys. C: 16, 1283 (1983).
43. B. I. Shklovskii and A. L. Efros: Electronic Properties of Doped Semiconductors (Springer-Verlag, Berlin, 1984).
44. A. Frommer, Y. Garini, A. Ron, and E. Cohen: J. Lumin.: 45, 9 (1990).
45. R. W. Yu, J. S. Zheng, M. J. Xiao, Z. R. Lin, and B. Z. Yan: Chin. Phys. Lett.: 13, 54 (1996).
46. H. M. Cheong, Y. Zhang, A. Mascarenhas, and J. F. Geisz: Phys. Rev. B: 61, 13 687 (2000).
47. C. Hirlimann, M. P. dos Santos, and M. Balkanski: J. Phys. C: 18, 6297 (1985).
48. R. A. Faulkner: Phys. Rev.: 175, 991 (1968).