Use of focusEDion-beam and modeling to optimize submicron MOSFET characteristics

IEEE Transactions on Electron Devices

Volumn 45, Issue 2, 1998, Pages 453-459

  Shen, Chih Chieh ^a   Murguia, James ^a   Goldsman, Neil ^b   Peckerar, Marty ^b   Melngailis, John ^b   Antoniadis, Dimitri A ^b  

^a UNIVERSITY OF MARYLAND   (United States)

^b USA   (United States)

Author keywords

Current source; Reliability; Threshold stability

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; HOT CARRIERS; ION BEAMS; ION IMPLANTATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

FOCUSED ION BEAMS (FIB); THRESHOLD STABILITY;

MOSFET DEVICES;

EID: 0031996674     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658680     Document Type: Article

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