An exclusive-OR logic circuit based on controlled quenching of series-connected negative differential resistance devices

IEEE Electron Device Letters

Volumn 17, Issue 6, 1996, Pages 309-311

  Chen, Kevin J ^a,b,c   Waho, Takao ^a,c   Maezawa, Koichi ^a,c   Yamamoto, Masafumi ^a,c  

^a NTT CORPORATION   (Japan)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^c IEEE

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS; LIGHT MODULATION; MOLECULAR BEAM EPITAXY; NEGATIVE RESISTANCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; TUNNEL DIODES;

CONTROLLED QUENCHING PROCESS; GATE VOLTAGE; LOGIC FUNCTIONS; NEGATIVE DIFFERENTIAL RESISTANCE DEVICES; RESONANT TUNNELING DEVICES; RESONANT TUNNELING DIODES;

LOGIC CIRCUITS;

EID: 0030166161     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.496467     Document Type: Article

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