Digital integrated circuit using integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb RITDs

Electronics Letters

Volumn 37, Issue 12, 2001, Pages 758-760

  Fay, P ^a   Lu, J ^a   Xu, Y ^a   Bernstein, G H ^a   Gonzalez, A ^a   Mazumder, P ^a   Chow, D H ^a   Schulman, J N ^a  

^a University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY DISSIPATION; FORMAL LOGIC; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE; MONOLITHIC INTEGRATED CIRCUITS; RESONANT TUNNELING; TUNNEL DIODES;

RESONANT INTERBAND TUNNELING DIODES (RITD); VOLTAGE GAIN;

DIGITAL INTEGRATED CIRCUITS;

EID: 0035821979     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010547     Document Type: Article

References (8)

1. 0.47As/AlAs resonant tunnelling diodes with switching time of 1.5 ps
2. Static frequency divider featuring reduced circuit complexity by utilizing resonant tunneling diodes in combination with HEMTs
3. A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter
4. 12 GHz clocked operation of ultralow power interband resonant tunneling diode pipelined logic gates
5. An 80-Gb/s optoelectronic delayed flip-flop IC using resonant tunneling diodes and uni-traveling-carrier photodiode
6. High-speed and low-power operation of a resonant tunneling logic gate MOBILE
7. Fabrication of monolithically-integrated InAlAs/InGaAs/InP HEMTs and InAs/ AlSb/GaSb resonant interband tunneling diodes
8. Design, fabrication, and performance of high-speed monolithically integrated InAlAs/ InGaAs/InP MSM/HEMT photoreceivers