Frequency multipliers using InP-based resonant-tunneling high electron mobility transistors

IEEE Electron Device Letters

Volumn 17, Issue 5, 1996, Pages 235-238

  Chen, Kevin J ^a,b,c   Yamamoto, Masafumi ^a,b  

^a IEEE

^b NTT CORPORATION   (Japan)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; HIGH ELECTRON MOBILITY TRANSISTORS; OHMIC CONTACTS; RESISTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE; TUNNEL DIODES;

NEGATIVE TRANSCONDUCTANCE; POWER CONSUMPTION; RESONANT TUNNELING DIODE; RESONANT TUNNELING TRANSISTORS; VOLTAGE SWING;

FREQUENCY MULTIPLYING CIRCUITS;

EID: 0030150122     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.491840     Document Type: Article

References (16)

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