InP-based high-performance monostable-bistable transition logic elements (MOBILE'S) using integrated multiple-input resonant-tunneling devices

IEEE Electron Device Letters

Volumn 17, Issue 3, 1996, Pages 127-129

  Chen, Kevin J ^a,b   Maezawa, Koichi ^a,b   Yamamoto, Masafumi ^b  

^a IEEE

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; THRESHOLD LOGIC; TRANSCONDUCTANCE; TUNNEL DIODES;

MONOLITHIC INTEGRATION; MONOSTABLE BISTABLE TRANSITION LOGIC ELEMENTS; PEAK TO VALLEY RATIO; RESONANT TUNNELING DIODES; WEIGHTED SUM OPERATION;

LOGIC GATES;

EID: 0030105078     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.485189     Document Type: Article

References (14)

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