Device technology for monolithic integration of inp-based resonant tunneling diodes and hemts

IEICE Transactions on Electronics

Volumn E79-C, Issue 11, 1996, Pages 1515-1523

  Chen, Kevin Jing ^a   Maezawa, Koichi ^b   Waho, Takao ^b   Yamamoto, Masafumi ^a  

^a NTT CORPORATION   (Japan)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

HEMT; Negative differential resistance; Negative transconductance; Quantum functional devices; RTD

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRON TUNNELING; FREQUENCY MULTIPLYING CIRCUITS; HIGH ELECTRON MOBILITY TRANSISTORS; QUANTUM ELECTRONICS; SEMICONDUCTOR DEVICE STRUCTURES; TUNNEL DIODES;

MONOLITHIC INTEGRATION; PARALLEL INTEGRATION; RESONANT TUNNELING DIODES;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0030284402     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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