Stabilizing dielectric constants of fluorine-doped SiO2 films by N2O-plasma annealing

Journal of the Electrochemical Society

Volumn 143, Issue 1, 1996, Pages 381-385

  Takeishi, S ^a   Kudoh, H ^a   Shinohara, R ^a   Tsukune, A ^a   Satoh, Y ^a   Miyazawa, H ^a   Harada, H ^a   Yamada, M ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; DOPING (ADDITIVES); FLUORINE; HYDROGEN BONDS; NITROGEN OXIDES; OXYGEN; PERMITTIVITY; PLASMA APPLICATIONS; SILICA; STABILITY;

FLUORINE DOPED SILICA FILMS; MOISTURE ABSORBING; NITROUS OXIDE; PLASMA ANNEALING; STABILIZING DIELECTRIC CONSTANTS;

THIN FILMS;

EID: 0029732933     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836441     Document Type: Article

References (12)

1. E. F. da Silva, IEEE Trans. Nucl. Sci., NS-9, 38 (1987).
2. U. S. Kim, C. H. Wolowodic, J. Jaccodine, F. Stevie, and P. Kafora, This Journal, 137, 2291 (1990).
3. D. Kouvatos, J. G. Huang, and R. J. Jaccodine, ibid., 138, 1752 (1991).
4. A. C. Adams and C. D. Capio, ibid., 128, 423 (1991).
5. D. D. J. Allman, K. P. Fuchs, and J. M. Cuchiaro, J. Vac. Sci. Technol, A9, 485 (1991).
6. N. Hirashita, M. Kobayakawa, A. Arimatsu, F. Yokoyama, and T. Ajioka, This Journal, 139, 794 (1992).
7. I. Tsuchiya, J. Phys. Chem., 86, 4107 (1982).
8. S. Koudo, Chem. Soc. Jpn., 52, 2046 (1979).
9. W. H. Zachariasen, J. Am. Chem. Soc., 54, 3841 (1932).
10. I. P. Lisovskii, Thin Solid Films, 213, 164 (1992).
11. R. A. Murray and W. Y. Ching, Phys. Rev., B39, 1320 (1989).
12. H. Fukuda, M. Yasuda, T. Iwabuchi, and S. Ohno, IEEE Electron Device Lett., EDL-12, 587 (1991).