Reliability of ultrathin (<2 nm) oxides on strained SiGe heterolayers

Semiconductor Science and Technology

Volumn 18, Issue 1, 2003, Pages 33-38

  Samanta, S K ^a   Chatterjee, S ^a   Choi, W K ^b   Bera, L K ^b   Banerjee, H D ^a   Maiti, C K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; LEAKAGE CURRENTS; OXIDATION; OXIDES; RELIABILITY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; STRESSES;

THERMAL OXIDATION;

ULTRATHIN FILMS;

EID: 0037231099     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/1/305     Document Type: Article

References (25)

1. Maiti C K and Armstrong G A 2001 Applications of Silicon-Germanium Heterostructure Devices (Bristol: Institute of Physics Publishing)
2. International Technology Roadmap for Semiconductors 2001 (San Jose, CA: Semiconductor Industry Association)
3. Maiti C K, Chakrabarti N B and Ray S K 2001 Strained Silicon Heterostructures: Materials and Devices (London: IEE)
4. Iyer S S, Solomon P M, Kesan V P, Bright A A, Freeouf J L, Nguyen T N and Warren A C 1991 A gate-quality dielectric system for SiGe metal-oxide-semiconductor devices IEEE Electron Device Lett. 12 246-8
5. Mukhopadhyay M, Ray S K, Maiti C K, Nayak D K and Shiraki Y 1995 Properties of SiGe oxides grown in a microwave oxygen plasma J. Appl. Phys. 75 6135-40
6. 2O RTA treatment IEEE Trans. Electron Devices 48 907-12
7. 2 dielectrics IEEE Trans. Electron Devices 44 104-8
8. Terrasi A, Scalese S, Adorno R, Ferlito E, Spadafora M and Rimini E 2002 Rapid thermal oxidation of epitaxial SiGe thin films Mater. Sci. Eng. B 89 269-73
9. 0.2/Si substrates Solid-State Electron. 46 991-5
10. Walstra S V and Sah C T 1997 Thin oxide thickness extrapolation from capacitance-voltage measurements IEEE Trans. Electron Devices 44 1136-42
11. Vincent E, Ghibaudo G, Morin G and Papadas C 1997 On the oxide thickness extraction in deep-submicron technology Proc. IEEE 1997 Int. Conf. on Microelectronic Test Structures vol 10, pp 105-10
12. Miura Y, Fujieda S and Hasegawa E 2000 Paramagnetic defects related to positive charges in silicon oxynitride films Japan. J. Appl. Phys. 39 L987-L989
13. 2/SiGe interface Japan. J. Appl. Phys. 37 1316-9
14. 1-x PMOS IEEE Electron Device Lett. 12 154-6
15. Maikap S, Senapati B and Maiti C K 2001 Technology CAD of SiGe-heterojunction field effect transistors Def. Sci. J. 51 195-9
16. 2 breakdown model for very low voltage lifetime extrapolation IEEE Trans. Electron Devices 41 761-7
17. Lu H C, Gusev E P, Garfunkel E, Busch B W, Gustafsson T, Sorsch T W and Green M L 2000 Isotopic labeling studies of interactions of nitric oxide and nitrous oxide with ultrathin oxynitride layers on silicon J. Appl. Phys. 87 1550-5
18. Leonarduzzi G D and Kwong D L 1998 Improving performance with oxynitride gate dielectrics Semicond. Int. 225-30
19. Dumin D J and Maddux J R 1993 Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides IEEE Trans. Electron Devices 40 986-93
20. Shi Y, Wang X and Ma T P 1999 Electrical properties of high-quality ultrathin nitride/oxide stack dielectrics IEEE Trans. Electron Devices 46 363-8
21. Fukuda H, Murai S, Endoh T and Nomura S 1997 Effect of oxynitridation on charge trapping properties of ultrathin silicon dioxide films J. Appl. Phys. 81 1825-8
22. 2-Si capacitors: dependence on oxide thickness J. Appl. Phys. 86 6382-91
23. Nayak D K, Kamjoo K, Park J S, Woo J C S and Wang K L 1990 Wet oxidation of GeSi strained layers by rapid thermal processing Appl. Phys. Lett. 57 369-71
24. LeGoues F K, Rosenberg R, Nguyen T, Himpsel F and Meyerson B S 1989 Oxidation studies of SiGe J. Appl. Phys. 65 1724-8
25. Goh I S, Zhang J F, Hall S, Eccleston W and Werner K 1995 Electrical properties of plasma grown oxide on MBE-Grown SiGe Semicond. Sci. Technol. 10 818-28