Effect of oxynitridation on charge trapping properties of ultrathin silicon dioxide films

Journal of Applied Physics

Volumn 81, Issue 4, 1997, Pages 1825-1828

  Fukuda, Hisashi ^a   Murai, Shoji ^a   Endoh, Toshiaki ^a   Nomura, Shigeru ^a  

^a MURORAN INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000814795     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364039     Document Type: Article

References (23)

1. C. T. Wang, Hot Carrier Design Considerations for MOS Devices and Circuits (Van Nostrand Reinhold, New York, 1992).
2. A. M. Goodman and J. M. Breece, J. Electrochem. Soc. 117, 982 (1970).
3. Y. Kamigaki, Y. Ito, and J. Ito, J. Appl. Phys. 48, 289 (1977).
4. A. C. Adams, T. E. Smith, and C. C. Chang, J. Electrochem. Soc. 127, 1787 (1980).
5. R. R. Razouk and B. E. Deal, J. Electrochem. Soc. 126, 1573 (1979).
6. H. Miki, M. Noguchi, K. Yokogawa, B. W. Kim, K. Asada, and T. Sugano, IEEE Trans. Electron Devices ED-35, 2245 (1988).
7. R. B. Fair, Rapid Thermal Processing (Academic, New York, 1993).
8. H. Fukuda, T. Arakawa, and S. Ohno, Electron. Lett. 26, 1505 (1990).
9. A. Uchiyama, H. Fukuda, T. Hayashi, T. Iwabuchi, and S. Ohno, in Technical Digest of International Electron Devices Meeting (IEDM), San Francisco, (Electron Devices Society of IEEE, New York, 1990), p. 425.
10. M. Yasuda, H. Fukuda, T. Iwabuchi, and S. Ohno, Jpn. J. Phys. 30, 3597 (1991).
11. T. Arakawa, Y. Yamashita, H. Hoga, S. Noda, and H. Fukuda, Appl. Phys. Lett. 63, 3364 (1993).
12. R. Koba and R. E. Tressler, J. Electrochem. Soc. 135, 144 (1988).
13. W. A. Pliskin, J. Vac. Sci. Technol. 14, 1064 (1977).
14. S. Yamazaki and Y. Kato, Surf. Sci. 7, 68 (1967).
15. M. S. Liang and C. Hu, in Technical Digest of International Electron Devices Meeting (IEDM), Washington, DC, (Electron Devices Society of IEEE, New York, 1981), p. 396.
16. T. Hosoi, M. Akizawa, and S. Matsumoto, J. Appl. Phys. 57, 2072 (1985).
17. Y. Nissan-Cohen, J. Shappir, and D. Frohman-Bentchkowsky, J. Appl. Phys. 54, 5793 (1983).
18. N. Klein and P. Solomon, J. Appl. Phys. 47, 4364 (1976).
19. T. H. Ning, J. Appl. Phys. 47, 3203 (1976).
20. D. J. DiMaria, J. Appl. Phys. 47, 4073 (1976).
21. H. S. Witham and P. M. Lenahan, Appl. Phys. Lett. 51, 1007 (1987).
22. F. J. Feigl, W. B. Fowler, and K. L. Yip, Solid State Commun. 14, 225 (1974).
23. I. C. Chen, S. E. Holland, and C. Hu, IEEE Trans. Electron Devices ED-32, 413 (1985).