Improving performance with oxynitride gate dielectrics

Semiconductor International

Volumn 21, Issue 8, 1998, Pages 225-230

  Leonarduzzi, Gianni D ^a,c   Kwong, Dim Lee ^b  

^a Scott Speciality Gases Inc   (United States)

^b The University of Texas at Austin   (United States)

^c Scott Semiconductor Gases ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); NITROGEN; NITROGEN OXIDES; PERFORMANCE; RELIABILITY; VLSI CIRCUITS;

OXYNITRIDE; ULTRATHIN GATE;

MOSFET DEVICES;

EID: 0032121278     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

1. Han, et al., IEDM, p. 617, 1994.
2. E. Hasegawa, et al., SSDM, p. 86, 1993.
3. Yoon, et al., IEEE Elec. Dev. Letts., 14, p. 179, 1993.
4. Joshi, et al., IEEE Elec. Dev. Letts., 14, p. 560, 1993.
5. Momose, et al., IEDM, p. 359, 1991.
6. Ting, et al., IEEE Elec. Dev. Letts., 12, p. 416, 1991.
7. Tobin, et al., Tech. Dig. Symp., VLSI Tech., p. 51, 1993.
8. Han, et al., Mic. Eng. 28, p. 89, 1995.
9. Hu, et al., IEEE Trans. Elec. Dev. 32, p. 584, 1985.
10. Wristers, et al., Appl. Phys. Lett., 68, p. 2094, 1996.
11. I.M. Liu, B.Y. Kim, H.F. Luan, D.L. Kwong, unpublished data, 1996.
12. G.D. Leonarduzzi, D.L. Kwong, pending U.S. patent application.