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Volumn 39, Issue 10 A, 2000, Pages

Paramagnetic defects related to positive charges in silicon oxynitride films

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON SPIN RESONANCE SPECTROSCOPY; NITRIDES; PARAMAGNETISM; SECONDARY ION MASS SPECTROMETRY; VACUUM APPLICATIONS;

HYDROGEN ANNEALING; PARAMAGNETIC DEFECTS; POSITIVE CHARGE CENTER; SILICON OXYNITRIDE FILMS; VACUUM ULTRAVIOLET IRRADIATION;

THIN FILMS;

EID: 0034290926 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.l987 Document Type: Article

Times cited : (4)

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