SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 512, Issue 1-2, 2002, Pages 135-150

Incident ion characteristics in ionized physical vapor deposition using molecular dynamics simulation

(4) Hwang, Chi Chuan a Huang, Gwo Jiunn b Ju, Shin Pon a Chang, Jee Gong c

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b SWANSEA UNIVERSITY (United Kingdom)

c NATIONAL CENTER FOR HIGH PERFORMANCE COMPUTING (Taiwan)

Author keywords

Ion implantation; Molecular dynamics; Surface structure, morphology, roughness, and topography

Indexed keywords

ARGON; COMPUTER SIMULATION; COPPER; ION IMPLANTATION; IONIZATION; KINETIC ENERGY; MOLECULAR DYNAMICS; PHYSICAL VAPOR DEPOSITION; POSITIVE IONS; SPUTTER DEPOSITION;

IONIZED PHYSICAL VAPOR DEPOSITION (IPVD);

SURFACE ROUGHNESS;

EID: 0037142419 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(02)01688-6 Document Type: Article

Times cited : (8)

References (34)

1
- 36449002062
- (1993) Appl. Phys. Lett. , vol.63 , pp. 3285
- Rossnagel, S.M.¹ Hopwood, J.²

2
- 0000522608
- (1994) J. Vac. Sci. Technol. B , vol.12 , pp. 449
- Rossnagel, S.M.¹ Hopwood, J.²

3
- 0029275124
- (1995) J. Vac. Sci. Technol. B , vol.13 , pp. 203
- Cheng, P.F.¹ Rossnagel, S.M.²

4
- 0000914280
- (1996) J. Vac. Sci. Technol. B , vol.14 , pp. 3270
- Nichols, C.A.¹ Rossnagel, S.M.² Hamaguchi, S.³

5
- 0001509042
- (1998) J. Vac. Sci. Technol. B , vol.16 , pp. 3008
- Rossnagel, S.M.¹

6
- 24644488361
- (1996) J. Vac. Sci. Technol. B , vol.14 , pp. 2603
- Hamaguchi, S.¹ Rossnagel, S.M.²

7
- 0029275415
- (1995) J. Vac. Sci. Technol. B , vol.13 , pp. 183
- Hamaguchi, S.¹ Rossnagel, S.M.²

8
- 0033204910
- (1999) IEEE Trans. Plasma Sci. , vol.5 , pp. 1433
- Vyvoda, M.A.¹ Abrams, C.F.² Grave, D.B.³

9
- 0000382005
- (1997) J. Appl. Phys. , vol.82 , pp. 1868
- Doughty, C.¹ Gorbatkin, S.M.² Berry, L.A.³

10
- 0001460414
- (1998) Appl. Phys. Lett. , vol.73 , pp. 3860
- Coronell, D.G.¹ Hansen, D.E.² Voter, A.F.³ Liu, C.L.⁴ Liu, X.Y.⁵ Kress, J.D.⁶

11
- 0033414545
- (1999) J. Vac. Sci. Technol. A , vol.17 , pp. 2819
- Kress, J.D.¹ Hanson, D.E.² Voter, A.F.³ Liu, C.L.⁴ Liu, X.Y.⁵ Coronell, D.G.⁶

12
- 0009614884
- (1999) J. Appl. Phys. , vol.27 , pp. 1462
- Abrams, C.F.¹ Graves, D.B.²

13
- 0009614884
- (1999) IEEE Trans. Plasma Sci. , vol.27 , pp. 1462
- Abrams, C.F.¹ Graves, D.B.²

14
- 0001532042
- (1986) Phys. Rev. B , vol.34 , pp. 895
- Biswas, R.¹ Hamann, D.R.²

15
- 33750587438
- (1984) J. Chem. Phys. , vol.81 , pp. 3684
- Berendsen, H.J.C.¹ Postma, J.P.M.² Van Gunsteren, W.F.³ DiNola, A.⁴ Haak, J.R.⁵

16
- 0001088707
- (1995) Nucl. Instrum. Meth. Phys. Res. B , vol.95 , pp. 171
- Kim, C.¹ Kang, H.² Park Seung, C.³

17
- 0006633802
- (1996) Mater. Sci. Eng. A , vol.217-218 , pp. 89
- Insepov, Z.¹ Yamada, I.²

18
- 0031122478
- (1997) Acta Mater. , vol.45 , pp. 1513
- Zhou, X.W.¹ Johnson, R.A.² Wadley, H.N.G.³

19
- 0001123808
- (1998) J. Vac. Sci. Technol. B , vol.16 , pp. 2585
- Rossnagel, S.M.¹

20
- 0003691085
- McGraw-Hill International, New York
- (1998) Thin Film Technology Handbook
- Elshabini, A.A.R.¹ Barlow F.D. III²

21
- 0000527681
- (1993) Phys. Rev. B , vol.48 , pp. 12164
- Kimmel, G.A.¹ Cooper, B.H.²

22
- 0001644389
- (1997) J. Appl. Phys. , vol.82 , pp. 3552
- Hanson, D.E.¹ Voter, A.F.² Kress, J.D.³

23
- 30944436511
- (1993) Phys. Rev. B , vol.48 , pp. 22
- Cleri, F.¹ Rosato, V.²

24
- 0024611896
- (1989) Philos. Mag. A , vol.59 , pp. 321
- Rosato, V.¹ Guillope, M.² Legrand, B.³

25
- 30944436511
- (1993) Phys. Rev. B , vol.48 , pp. 22
- Cleri, F.¹ Rosato, V.²

26
- 0031682010
- (1998) Surf. Sci. , vol.395 , pp. 317
- Ladeveze, M.¹ Treglia, G.² Muller, P.³ Arnaud d'Avitaty, F.⁴

27
- 0033878975
- (2000) Comput. Mech. , vol.25 , pp. 78
- Iwasaki, T.¹

28
- 4243566177
- (1987) Phys. Rev. B , vol.35 , pp. 7690
- Müller, K.H.¹

29
- 0000634645
- (1995) Phys. Rev. B , vol.51 , pp. 5061
- Strickland, B.¹ Roland, C.²

30
- 0003576136
- John Wiley & Sons, Inc., New York
- (1992) Molecular Dynamic Simulation
- Haile, J.M.¹

31
- 0037087330
- (2002) J. Appl. Phys. , vol.91 , pp. 3569-3578
- Hwang, C.C.¹ Hwang, G.J.² Chang, J.G.³ Ju, S.P.⁴

32
- 0009649880
- in press
- J. Vac. Sci. Technol. B
- Ju, S.P.¹ Weng, C.I.² Chang, J.G.³ Hwang, C.C.⁴

33
- 0031076636
- (1997) IEEE Trans. Semicond. Manufact. , vol.10 , pp. 131
- Saito, Y.¹ Hirasawa, S.² Saito, S.³ Nezu, H.⁴ Yamaguchi, H.⁵ Owada, N.⁶

34
- 0033734663
- (2000) Thin Solid Films , vol.365 , pp. 152
- Cale, T.S.¹ Merchant, T.P.² Borucki, L.J.³ Labun, A.H.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.