Interaction between gas rarefaction and metal ionization in ionized physical vapor deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 6, 1998, Pages 3008-3012

  Rossnagel, S M ^a  

^a IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001509042     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590333     Document Type: Article

References (26)

1. M. Yamashita, J. Vac. Sci. Technol. A 7, 151 (1989).
2. W. M. Holber, J. S. Logan, H. Grabarz, J. Yeh, J. Caughman, A. Sugarman, and F. Turene, J. Vac. Sci. Technol. A 11, 2903 (1993).
3. S. M. Rossnagel and J. Hopwood, Appl. Phys. Lett. 63, 3285 (1993).
4. S. M. Rossnagel and J. Hopwood, J. Vac. Sci. Technol. B 12, 449 (1994).
5. Y.-W. Kim, J. Moser, I. Petrov, J. Greene, and S. M. Rossnagel, J. Vac. Sci. Technol. A 12, 3169 (1994).
6. S. M. Rossnagel, J. Vac. Sci. Technol. B 13, 125 (1995).
7. S. Hamaguchi and S. M. Rossnagel, J. Vac. Sci. Technol. B 13, 183 (1995).
8. Y.-W. Kim, I. Petrov, J. E. Greene, and S. M. Rossnagel, J. Vac. Sci. Technol. A 14, 346 (1995).
9. P. F. Cheng, S. M. Rossnagel, and D. Ruzic, J. Vac. Sci. Technol. B 13, 203 (1995).
10. S. M. Rossnagel, in Beam-solid Interactions for Materials Synthesis and Characterization, edited by D. E. Luzzi, T. F. Heinz, M. Iwaki, and D. C. Jacobson (Materials Research Society, Pittsburgh, 1995), Vol. 354.
11. S. Hamaguchi and S. M. Rossnagel, in Modeling and Simulation of Thin-Film Processing, edited by C. A. Volkert, R. J. Lee, D. J. Srolovitz, and M. J. Fluss (Materials Research Society, Pittsburgh, 1995), p. 113.
12. J. Hopwood and F. Qian, J. Appl. Phys. 78, 758 (1995).
13. S. M. Rossnagel, Proceedings of the VLSI Multilevel Interconnection Conference (VMIC), Santa Clara, CA, 28-29 June, 1995, p. 576.
14. S. M. Rossnagel, Proceedings of ISSP'95, Tokyo, 8-9 June 1995, p. 253.
15. S. M. Rossnagel, Thin Solid Films 263, 1 (1995).
16. S. M. Rossnagel, Semicond. Int. (February 1996).
17. S. Hamaguchi and S. M. Rossnagel, J. Vac. Sci. Technol. B 14, 2603 (1996).
18. S. M. Gorbatkin, D. B. Poker, R. L. Rhoades, L. A. Berry, and S. M. Rossnagel, J. Vac. Sci. Technol. B 14, 1853 (1996).
19. C. A. Nichols, S. M. Rossnagel, and S. Hamaguchi, J. Vac. Sci. Technol. B 15, 3270 (1996).
20. M. Dickson, F. Qian, and J. Hopwood, J. Vac. Sci. Technol. A 15, 340 (1997).
21. M. Dickson and J. Hopwood, J. Vac. Sci. Technol. A 15, 2307 (1997).
22. S. Hamaguchi, A. Mayo, S. M. Rossnagel, D. Kotecki, K. Milkove, C. Wang, and C. Farrell, Jpn. J. Appl. Phys., Part 1 36, 4762 (1997).
23. Y. Tanaka, T. Tanimoto, P. Gopalraja, J. Forster, and Z. Xu, Proceedings of the Multilevel Interconnect Conference (VMIC), Santa Clara. CA, 10-12 June 1997, p. 437.
24. S. M. Rossnagel, J. Vac. Sci. Technol. A 6, 19 (1988).
25. T. Takaishi and Y. Sensui, Trans. Faraday Soc. 59, 2509 (1963).
26. S. M. Rossnagel and H. R. Kaufman, J. Vac. Sci. Technol. A 6, 223 (1988).