Molecular dynamics analysis of reflow process of sputtered aluminum films

IEEE Transactions on Semiconductor Manufacturing

Volumn 10, Issue 1, 1997, Pages 131-136

  Saito, Yoko ^a   Hirasawa, Shigeki ^a   Saito, Tatsuyuki ^a   Nezu, Hiroki ^a   Yamaguchi, Hizuru ^a   Owada, Nobuo ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ATOMS; COMPUTER SIMULATION; HIGH TEMPERATURE OPERATIONS; LSI CIRCUITS; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; SPUTTER DEPOSITION; SUBSTRATES; TEMPERATURE;

FILM THICKNESS DISTRIBUTION; FREE SURFACE PROFILES; MOLECULAR DYNAMICS ANALYSIS; REFLOW PROCESS; SPUTTERED ALUMINUM FILMS;

METALLIC FILMS;

EID: 0031076636     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.554498     Document Type: Article

References (8)

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