Absorption spectra of GaN: Film characterization by Urbach spectral tail and the effect of electric field

Journal of Crystal Growth

Volumn 230, Issue 3-4, 2001, Pages 459-461

  Jacobson, M A ^a   Konstantinov, O V ^a   Nelson, D K ^a   Romanovskii, S O ^a   Hatzopoulos, Z ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF CRETE   (Greece)

Author keywords

A1. Characterization; A3. Metalorganic vapor phase deposition; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

ABSORPTION SPECTROSCOPY; ELECTRIC FIELD EFFECTS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

URBACH ENERGY;

SEMICONDUCTING FILMS;

EID: 0035451925     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01246-5     Document Type: Article

References (5)