SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 30, Issue 3, 2001, Pages 138-146

The temperature dependence of the thermal conductivity of single crystal GaN films

(3) Luo, C a Clarke, D R a Dryden, J R b

a University of California (United States)

b UNIVERSITY OF WESTERN ONTARIO (Canada)

Author keywords

Dislocation density; Electrical third harmonic technique; GaN; Thermal conductivity

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; SINGLE CRYSTALS; THERMAL CONDUCTIVITY OF SOLIDS; THERMAL EFFECTS; THERMAL VARIABLES MEASUREMENT;

DISLOCATION DENSITY; DOPANT CONCENTRATION; ELECTRICAL THIRD HARMONIC TECHNIQUE;

SEMICONDUCTING FILMS;

EID: 0035275211 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-001-0007-1 Document Type: Article

Times cited : (29)

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