Defect transitions in GaN between 3.0 and 3.4 eV

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 671-676

  Rieger, W ^a   Ambacher, O ^a   Rohrer, E ^a   Angerer, H ^a   Stutzmann, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; LIGHT ABSORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING;

CUBIC INCLUSIONS; EPITAXIAL LAYERS; MG DOPING; NITRIDE SEMICONDUCTORS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030717037     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)