Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy

Materials Research Society Symposium - Proceedings

Volumn 595, Issue , 2000, Pages

  Korotkov, R Y ^a   Wessels, B W ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33751332508     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (21)

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20. -1) = 0.104 (0.0867) are used with literature values given in brackets.
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