Calculations of electronic and optical properties in p-doped AlGaN/GaN superlattices and quantum wells

Journal of Crystal Growth

Volumn 246, Issue 3-4, 2002, Pages 347-354

  Rodrigues, Sara C P ^a   Sipahi, G M ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

A1. p Doping; A1. Self consistent method; A3. Quantum wells; A3. Superlattices; B1. Aluminium gallium nitride

Indexed keywords

BAND STRUCTURE; ELECTRIC FIELD EFFECTS; HAMILTONIANS; PHOTOLUMINESCENCE; POISSON EQUATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES;

PHOTOLUMINESCENCE SPECTRA;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0037121707     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01760-8     Document Type: Conference Paper

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