Analysis of the threshold current in nitride-based lasers

Journal of Crystal Growth

Volumn 230, Issue 3-4, 2001, Pages 522-526

  Hangleiter, A ^a   Heppel, S ^a   Off, J ^b   Kuhn, B ^b   Scholz, F ^b   Bader, S ^c   Hahn, B ^c   Harle V ^c  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

^c OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

B1. Nitrides; B2. Semiconducting III V materials; B3. Laser diodes

Indexed keywords

GAIN CONTROL; LIGHT EMISSION; LIGHT POLARIZATION; MATHEMATICAL MODELS; NITRIDES; OPTICAL RESOLVING POWER;

BAND-TO-BAND TRANSITIONS; NITRIDE-BASED LASERS; THRESHOLD CURRENTS;

QUANTUM WELL LASERS;

EID: 0035451243     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01301-X     Document Type: Article

References (11)