Thermal stability and performance reliability of Pt/Ti/WSi/Ni ohmic contacts to n-SiC for high temperature and pulsed power device applications

Journal of Applied Physics

Volumn 91, Issue 6, 2002, Pages 3864-3868

  Cole, M W ^a   Joshi, P C ^a   Hubbard, C ^a   Demaree, J D ^a   Ervin, M ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGING TESTS; CHEMICAL INTERDIFFUSION; CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL FAILURES; FIELD EMISSION SCANNING; HIGH TEMPERATURE; MATERIAL PROPERTY; PERFORMANCE RELIABILITY; PULSED POWER DEVICES; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SIC SUBSTRATES; THERMALLY STABLE;

ANNEALING; ATOMIC FORCE MICROSCOPY; ELECTRIC CONTACTORS; ELECTRIC PROPERTIES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; TESTING; THERMAL FATIGUE; THERMODYNAMIC STABILITY;

OHMIC CONTACTS;

EID: 0037087465     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1450024     Document Type: Article

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