Improved ni ohmic contact on n-type 4H-SiC

Journal of Electronic Materials

Volumn 26, Issue 3, 1997, Pages 119-122

  Hallin, C ^a   Yakimova, R ^a   Pecz B ^b   Georgieva, A ^c   Marinova, T S ^d   Kasamakova, L ^e   Kakanakov, R ^e   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^c UNIVERSITY OF SOFIA   (Bulgaria)

^d INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY   (Bulgaria)

^e Central Laboratory of Applied Physics Bulgarian Academy of Sciences   (Bulgaria)

Author keywords

Al Ni Al 4H SiC; Transmission electron microscopy; X ray photoelectron spectroscopy

Indexed keywords

4H SILICON CARBIDE; BONDING ENERGIES; CONTACT LAYERS; ELEMENT DISTRIBUTION; METAL SEMICONDUCTOR INTERFACE; METAL-SEMICONDUCTOR CONTACTS; SEMI-CONDUCTOR SURFACES; SPECIFIC CONTACT RESISTANCES; TRANSMISSION ELECTRON;

ALUMINUM; ANNEALING; ELECTRON SPECTROSCOPY; ELECTRONIC PROPERTIES; OHMIC CONTACTS; PHOTOELECTRONS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON CARBIDE;

EID: 0004052350     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0136-2     Document Type: Article

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