Reaction of thin Ni films with (001) 3C-SiC at 700°C

Microelectronic Engineering

Volumn 37-38, Issue , 1997, Pages 529-534

  Gasser, Stefan M ^a   Bachli A ^a,b   Garland, Carol M ^a   Kolawa, E ^a   Nicolet, M A ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b Balzers AG   (Liechtenstein)

Author keywords

Morphology; Nickel; SiC; Thin film; Transmission electron microscopy

Indexed keywords

ANNEALING; CARBON; MORPHOLOGY; NICKEL; SILICON CARBIDE; SINGLE CRYSTALS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON BEAM EVAPORATION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031270395     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00156-1     Document Type: Article

References (5)

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2. C.S. Pai, C.M. Hanson, S.S. Lau, X-ray diffraction and ion backscattering study of thermally annealed Pd/SiC and Ni/SiC, J. Appl. Phys. 57(2) (1985) 618-619.
3. H. Krappitz, H.A. Schaeffer, Joining Ceramics, Glass and Metal, Verlag der Deutschen Glastechnischen Gesellschaft, Frankfurt/M, Germany, 1993.
4. A. Bächli et al., to be submitted.
5. J.S. Chen, E. Kolawa, M.-A. Nicolet, Solid-state reaction of Pt thin film with single-crystal (001) β-SiC, J. Mater. Res. 9(3) (1994) 648-657.