TEM study of Ni and Ni2Si ohmic contacts to SiC

Diamond and Related Materials

Volumn 6, Issue 10, 1997, Pages 1428-1431

  Pecz B ^a   Radnoczi G ^a   Cassette, S ^b   Brylinski, C ^b   Arnodo, C ^b   Noblanc, O ^b  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b THALES   (France)

Author keywords

Electron microscopy; Ohmic contacts; Silicon carbide

Indexed keywords

EID: 0043229555     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(97)00069-1     Document Type: Article

References (5)

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5. C. Arnodo, S. Tyc, F. Wyczisk, C. Brilinsky, 6th International Conference on Silicon Carbide and Related Materials, Kyoto, 1995.