On stress induced leakage current in 5 and 3 nm thick oxides

Microelectronics Reliability

Volumn 40, Issue 4-5, 2000, Pages 711-714

  Meinertzhagen, A ^a   Zander, D ^a   Petit, C ^a   Jourdain, M ^a   Gogenheim, D ^b  

^a UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

^b Lab d'Etud Microlectron Mat l'I   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; ELECTRON TUNNELING; GATES (TRANSISTOR); LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SILICA; STRESSES;

STRESS INDUCED LEAKAGE CURRENTS (SILC);

MOS DEVICES;

EID: 0033743144     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00277-2     Document Type: Article

References (12)

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