Effect of radiation induced deep level traps on Si detector performance

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 476, Issue 3, 2002, Pages 537-549

  Eremin, V ^a   Verbitskaya, E ^a   Li, Z ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS; CRYSTAL DEFECTS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRIC SPACE CHARGE; HIGH ENERGY PHYSICS; LOW TEMPERATURE EFFECTS; PARTICLE DETECTORS; POLARIZATION; RADIATION EFFECTS;

SEMICONDUCTOR DETECTORS;

SILICON SENSORS;

EID: 0037059376     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(01)01640-0     Document Type: Conference Paper

References (25)

1. Donor removal in neutron irradiated silicon detectors with doping concentration dominated by thermal donors
2. The origin of double peak electric field distribution in heavily irradiated silicon detectors
3. Lazarus effect: Physical model and analytical simulation
4. Optimization of electric field distribution by free carrier injection in silicon detectors operated at low temperatures
5. Competition of generation channels in reverse current of irradiated silicon detectors
6. Polarization of silicon detectors by minimum ionizing particles