Effect of deep level trapping of free carriers on the stabilization of current-voltage characteristics of high resistivity silicon detectors irradiated by high fluence of neutrons

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 383, Issue 2-3, 1996, Pages 528-536

  Eremin, V ^a   Li, Z ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC SPACE CHARGE; MATHEMATICAL MODELS; NEUTRON IRRADIATION; RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; SILICON SENSORS;

CURRENT INJECTION; SPACE CHARGE LIMITED CURRENT MODEL; SPACE CHARGE MODIFICATION;

PARTICLE DETECTORS;

EID: 0030385923     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(96)00794-2     Document Type: Article

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