Direct observation and measurements of neutron-induced deep levels responsible for Neff changes in high-resistivity silicon detectors using TCT

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 388, Issue 3, 1997, Pages 297-307

  Li, Z ^a   Li, C J ^a   Eremin, V ^b   Verbitskaya, E ^b  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC SPACE CHARGE; ELECTRON ENERGY LEVELS; ELECTRONS; IRRADIATION; LASER PULSES; NEUTRONS; SILICON; TEMPERATURE;

DEEP LEVEL; ELECTRON TRAPPING; FREE CARRIER; SILICON DETECTORS; TRANSIENT CURRENT TECHNIQUE;

RADIATION DETECTORS;

EID: 0031120652     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(96)01252-1     Document Type: Article

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